JPS6155268B2 - - Google Patents

Info

Publication number
JPS6155268B2
JPS6155268B2 JP56056369A JP5636981A JPS6155268B2 JP S6155268 B2 JPS6155268 B2 JP S6155268B2 JP 56056369 A JP56056369 A JP 56056369A JP 5636981 A JP5636981 A JP 5636981A JP S6155268 B2 JPS6155268 B2 JP S6155268B2
Authority
JP
Japan
Prior art keywords
layer
amorphous
crystalline
tin oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56056369A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5713778A (en
Inventor
Jon Hooberu Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5713778A publication Critical patent/JPS5713778A/ja
Publication of JPS6155268B2 publication Critical patent/JPS6155268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP5636981A 1980-06-20 1981-04-16 Photoelectric converter Granted JPS5713778A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/161,550 US4292461A (en) 1980-06-20 1980-06-20 Amorphous-crystalline tandem solar cell

Publications (2)

Publication Number Publication Date
JPS5713778A JPS5713778A (en) 1982-01-23
JPS6155268B2 true JPS6155268B2 (en]) 1986-11-27

Family

ID=22581638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5636981A Granted JPS5713778A (en) 1980-06-20 1981-04-16 Photoelectric converter

Country Status (4)

Country Link
US (1) US4292461A (en])
EP (1) EP0042467B1 (en])
JP (1) JPS5713778A (en])
DE (1) DE3160545D1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193676U (en]) * 1987-12-15 1989-06-20

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US4434318A (en) 1981-03-25 1984-02-28 Sera Solar Corporation Solar cells and method
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
JPS58128778A (ja) * 1982-01-28 1983-08-01 Seiko Epson Corp 半導体装置
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPH0644638B2 (ja) * 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
JPS60101979A (ja) * 1983-11-07 1985-06-06 Daihen Corp 光起電力素子
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
EP0177172A3 (en) * 1984-08-29 1988-09-21 Varian Associates, Inc. Monolithic semiconductor
US4881979A (en) * 1984-08-29 1989-11-21 Varian Associates, Inc. Junctions for monolithic cascade solar cells and methods
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
US4923524A (en) * 1985-05-06 1990-05-08 Chronar Corp. Wide ranging photovoltaic laminates comprising particulate semiconductors
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPS62230064A (ja) * 1986-03-31 1987-10-08 Semiconductor Energy Lab Co Ltd 半導体装置作成方法
USH667H (en) 1987-05-14 1989-09-05 The United States of America as represented by the Secretaryof the Air Force Patterned tunnel junction
ATE124169T1 (de) * 1987-11-20 1995-07-15 Canon Kk Photovoltaisches pin-bauelement, tandem-und triple-zellen.
US4954851A (en) * 1988-05-26 1990-09-04 Bell Communications Research Inc. Schottky barrier on indium gallium arsenide
US5808233A (en) * 1996-03-11 1998-09-15 Temple University-Of The Commonwealth System Of Higher Education Amorphous-crystalline thermocouple and methods of its manufacture
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
SG113443A1 (en) * 2001-12-05 2005-08-29 Semiconductor Energy Laboratao Organic semiconductor element
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell
JP2008235521A (ja) * 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
EP2438621A4 (en) * 2009-06-05 2014-04-23 Semiconductor Energy Lab PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US9818901B2 (en) * 2011-05-13 2017-11-14 International Business Machines Corporation Wafer bonded solar cells and fabrication methods
US10100415B2 (en) * 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages
WO2016069758A1 (en) * 2014-10-29 2016-05-06 Sru Corporation Tandem photovoltaic device
FR3047351B1 (fr) 2016-02-03 2023-07-14 Soitec Silicon On Insulator Substrat avance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312797B2 (en]) * 1974-07-13 1978-05-04
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193676U (en]) * 1987-12-15 1989-06-20

Also Published As

Publication number Publication date
DE3160545D1 (en) 1983-08-11
US4292461A (en) 1981-09-29
JPS5713778A (en) 1982-01-23
EP0042467A3 (en) 1982-03-10
EP0042467B1 (en) 1983-07-06
EP0042467A2 (en) 1981-12-30

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